微机电器件设计.制造及计算机辅助设计

内容简介

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Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．

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目录

Chapter1　Introduction ………………………………………………………………………… 11．1　ConceptofMEMS ……………………………………………………………………… 11．2　DevelopmentofMEMS ………………………………………………………………… 41．3　MEMSCAD …………………………………………………………………………… 9Chapter2　BasictheoryofMEMS …………………………………………………………… 122．1　TheoryofelectrostaticMEMScombactuators …………………………………… 122．1．1　Introduction ……………………………………………………………………… 122．1．2　Operatingprinciples …………………………………………………………… 132．1．3　Platecapacitortheoryinidealcondition ……………………………………… 142．1．4　ThemodifiedmodelofMEMSplatecapaciator ……………………………… 172．1．5　Calculationofelectrostaticcombdrivingforceinidealsituation …………… 242．1．6　Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 262．2　RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 342．2．1　Introduction ……………………………………………………………………… 342．2．2　Theoreticalcalculationmethodforcantileverbeam ………………………… 352．2．3　RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGendclampedbeams ………………………………………………………………… 362．2．4　RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtensionandcompression ………………………………………………………………… 402．3　MembranetheoryofMEMS ………………………………………………………… 472．3．1　Theoryofclampedaroundcirculardiaphragm ………………………………… 482．3．2　Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49References …………………………………………………………………………………… 52Chapter3　MEMSmaterials …………………………………………………………………… 533．1　Monocrystallinesilicon ……………………………………………………………… 533．1．1　Introduction ……………………………………………………………………… 533．1．2　Crystalorientationofmonocrystallinesilicon ………………………………… 553．2　Polycrystallinesilicon ………………………………………………………………… 643．3　Silica …………………………………………………………………………………… 663．4　Piezoelectricmaterials ………………………………………………………………… 673．4．1　Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 673．4．2　Quartzcrystal …………………………………………………………………… 683．4．3　Piezoelectricceramics …………………………………………………………… 733．5　OtherMEMSmaterials ……………………………………………………………… 753．6　Summary ……………………………………………………………………………… 76Chapter4　MEMStechnology ………………………………………………………………… 774．1　MEMSlithographyprocess ………………………………………………………… 784．2　KeytechnologyofMEMSlithographyprocess …………………………………… 804．2．1　Wafercleaning …………………………………………………………………… 804．2．2　Siliconoxidation ………………………………………………………………… 804．2．3　Spincoatingprocess …………………………………………………………… 874．2．4　Prebaking ………………………………………………………………………… 904．2．5　Exposure ………………………………………………………………………… 924．2．6　Development ……………………………………………………………………… 944．2．7　Hardening ………………………………………………………………………… 964．2．8　FabricationoftheSiO2 window ………………………………………………… 974．3　SubsequentprocessofMEMS ……………………………………………………… 984．3．1　Bulksilicontechnology ………………………………………………………… 984．3．2　Surfacesiliconprocess ………………………………………………………… 1034．3．3　LIGAtechnology ……………………………………………………………… 1044．3．4　Sputteringtechnology ………………………………………………………… 1054．3．5　LiftGoffprocess ………………………………………………………………… 1074．4　Filmpreparationtechnology………………………………………………………… 1074．5　Bondingprocess ……………………………………………………………………… 1084．5．1　Anodicbondingprocess………………………………………………………… 1094．5．2　SiliconGsilicondirectbonding ………………………………………………… 1104．5．3　Metaleutecticbonding ………………………………………………………… 1134．5．4　Coldpressureweldingbonding ……………………………………………… 1144．6　EngineeringexamplesofcombinationformultipleprocessestofabricatetheMEMSdevice ………………………………………………………………………… 1154．6．1　Introduction …………………………………………………………………… 1154．6．2　EngineeringexampleoffabricationprocessforresonantMEMSgyroscope…………………………………………………………………………………… 1154．6．3　EngineeringexampleofelectromagneticmicroGmotorproductionprocess…………………………………………………………………………………… 1184．7　Summary ……………………………………………………………………………… 124References…………………………………………………………………………………… 125Chapter5　Frictionwearandtearundermicroscale ……………………………………… 1265．1　OffGchiptestingmethodformicrofriction ………………………………………… 1275．1．1　MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 1275．1．2　MicroGtribologytestwithAFM ……………………………………………… 1285．1．3　MicroGtribologytestwithspecialmeasuringdevice ………………………… 1305．2　OnGchiptestingmethodformicrofriction ………………………………………… 1325．2．1　OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 1325．2．2　OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersofthebimorphmaterial…………………………………………………………… 1395．3　ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 1415．3．1　Structureandworkingprinciple ……………………………………………… 1415．3．2　Calculationofpertinenttheory ……………………………………………… 1425．3．3　Technologicalanalysisofstructuraldesign ………………………………… 1485．3．4　Testingresultsanddataanalysis……………………………………………… 1525．3．5　ResearchandtestofwearproblemofMEMSdevices ……………………… 1615．4　Summary ……………………………………………………………………………… 165References…………………………………………………………………………………… 165Chapter6　MEMStestingtechnologyandengineeringapplication ………………………… 1696．1　Accelerationmeasurementandcorrespondingsensors …………………………… 1696．1．1　Workingprincipleoftheaccelerationsensorandtheclassification ……… 1706．1．2　Capacitivesiliconmicromechanicalaccelerometer …………………………… 1726．1．3　Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 1736．1．4　Piezoelectricmicromechanicalaccelerometer ………………………………… 1746．1．5　ResonantsiliconMEMSaccelerometer ……………………………………… 1756．2　Angularspeedmeasurementandcorrespondingsensors ………………………… 1776．2．1　Workingprinciple ……………………………………………………………… 1776．2．2　DevelopmentofMEMSgyroscope …………………………………………… 1786．2．3　Classificationofmicromechanicalgyroscope ………………………………… 1886．3　Pressuremeasurementandcorrespondingsensors ……………………………… 1906．3．1　Workingpincinple ……………………………………………………………… 1906．3．2　Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 1936．4　MeasurementofmicroGtorque ……………………………………………………… 1986．4．1　Introduction …………………………………………………………………… 1986．4．2　Workingprincipleofnoncontactmethod …………………………………… 1996．4．3　Theoreticalcalculation ………………………………………………………… 2006．4．4　Correspondingequipmenttorealizethenoncontactmethod ……………… 2056．4．5　Experimentresultanddiscussion …………………………………………… 2096．5　Microscopicmorphologytestingmethod ………………………………………… 2116．6　Summary ……………………………………………………………………………… 212References…………………………………………………………………………………… 212Chapter7　ApplicationexamplesofthefiniteelementmethodinthedesignofMEMSdevices …………………………………………………………………… 2187．1　Importantconceptsofthesoftware………………………………………………… 2187．2　IntroductionoftheAnsyssoftwareinterface……………………………………… 2207．3　ThecoordinatesysteminAnsys …………………………………………………… 2217．4　Engineeringexamples ……………………………………………………………… 2267．4．1　StaticanalysisofsingleGclampedbeam ……………………………………… 2267．4．2　ModalanalysisofdoubleGclampedbeam ……………………………………… 2457．4．3　CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 2577．4．4　Fatiguestrengthcalculationexample ………………………………………… 2647．5　Summary ……………………………………………………………………………… 272

封面

书名:微机电器件设计.制造及计算机辅助设计

作者:郭占社

页数:未知

定价:¥65.0

出版社:北京航空航天大学出版社

出版日期:2016-05-01

ISBN:9787512421097

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